CRCU

Chemical Research in Chinese Universities ›› 2006, Vol. 22 ›› Issue (6): 692-695.doi:

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Photoluminescence Properties of Two-dimensional Planar Layer and Three-dimensional Island Layer for ZnO Films Grown Using MOCVD

HUANG Ke-ke1, HOU Chang-min1, GAO Zhong-min1, LI Xiang-shan1, FENG Shou-hua1, ZHANG Yuan-tao2, ZHU Hui-chao2 and DU Guo-tong2
   

    1. State Key Laboratory of Inorganic Synthesis and Preparative Chemistry;
    2. Department of Electronic Science and Engineering, Jilin University, Changchun 130012, P. R. China
  • Received:2005-11-21 Revised:1900-01-01 Online:2006-11-25 Published:2006-11-25
  • Contact: FENG Shou-hua E-mail:shfeng@mail.jlu.edu.cn

Cited

6

Abstract: ZnO(002) films with different thicknesses ranging from 7 to 300 nm were grown on sapphire(006) substrates via metal-organic chemical vapor deposition(MOCVD). The two-dimensional(2D) planar layer and the three-dimensional(3D) island layer were studied by using of X-ray diffraction(XRD) rocking curves and atomic force microscopy(AFM). The room temperature photoluminescence(PL) spectra show a blue shift of the peak positions of the ultraviolet(UV) emission with increasing film thickness. The blue shift is remarkably high(393—380 nm) when an increase in film thickness(7—15 nm) is accompanied by the change of structure from a 2D planar layer to a 3D island layer. The PL spectra at 77 K also indicate that there are different transition mechanisms in the film thickness from a 2D planar layer to a 3D island layer near the 2D layer region.

Key words: ZnO films, Metal-organic chemical vapor deposition(MOCVD), Photoluminescence, Planar layer, Island layer