Temperature-dependent Photoluminescence of Silicon Nanocrystals Embedded in SiO2 Matrix

doi:10.1007/s40242-018-7417-6

Chemical Research in Chinese Universities ›› 2018, Vol. 34 ›› Issue (4): 513-516.doi: 10.1007/s40242-018-7417-6

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Temperature-dependent Photoluminescence of Silicon Nanocrystals Embedded in SiO₂ Matrix

ZHANG Tianning^1,3, ZHANG Kenan¹, CHEN Xiren¹, WANG Shuxia^1,3, ZHANG Rongjun², SHAO Jun¹, CHEN Xin^1,3, DAI Ning^1,3

1. National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, P. R. China;
2. Department of Optical Science and Engineering, School of Information Science and Engineering, Fudan University, Shanghai 200433, P. R. China;
3. University of Chinese Academy of Sciences, Beijing 100049, P. R. China

Received:2017-12-20 Online:2018-08-01 Published:2018-06-11
Contact: CHEN Xin, DAI Ning E-mail:xinchen@mail.sitp.ac.cn;ndai@mail.sitp.ac.cn
Supported by:
Supported by the National Key R&D Program of China(No.2016YFA0202200) and the Fund of the Youth Innovation Promotion Association of Chinese Academy of Sciences(CAS) and the Humboldt(AvH).

Abstract

ZHANG Tianning, ZHANG Kenan, CHEN Xiren, WANG Shuxia, ZHANG Rongjun, SHAO Jun, CHEN Xin, DAI Ning. Temperature-dependent Photoluminescence of Silicon Nanocrystals Embedded in SiO₂ Matrix[J]. Chemical Research in Chinese Universities, 2018, 34(4): 513-516.

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Temperature-dependent Photoluminescence of Silicon Nanocrystals Embedded in SiO₂ Matrix

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