Chemical Research in Chinese Universities ›› 1996, Vol. 12 ›› Issue (3): 240-244.

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Trace Element Analysis in Compound Semiconductor Material by Resonant Laser Ablation/Ionization Mass Spectrometry

Peng Wei-xian, Dens, R., Ledingham, K. W. D., Singhal, R. P.   

  1. Department of Physics, The University J Glasgow, Glasgow G12 8QQ, UK
  • Received:1995-08-20 Online:1996-07-15 Published:2011-11-18

Abstract: The trace element Zn in the Zn-doped multi-layer ш - V group compound semiconductor was detected by means of Resonant Laser Ablation/lomzation(RLA). A detection limit of 2. 5 X 1017 atoms/cm3 (about 5 ppm) has been estimated. The mass spectra and the optical resonant ionization spectrum around 214 nm are given in this paper.

Key words: Zn, Laser Ablation, Semiconductor