Effects of Ga-flux on Optical Properties and Morphology of GaN Grown via Molecular Beam Epitaxy

Chemical Research in Chinese Universities ›› 2004, Vol. 20 ›› Issue (6): 747-750.

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Effects of Ga-flux on Optical Properties and Morphology of GaN Grown via Molecular Beam Epitaxy

YANG Jing-hai^1,2, GONG Jie^1,3, FAN Hou-gang¹, YANG Li-li¹, ZHANG Yong-jun¹, Zsebk O.⁴, CHEN Gang²

1. The Institute of Condensed State Physics, Jilin Normal University, Siping 136000, P. R. China;
2. College of Materials Science and Engineering, Jilin University, Changchun 130023, P. R. China;
3. Applied Science College, Changchun University, Changchun 130022, P. R. China;
4. Department of Physics, Chalmers University of Technology, Gteborg SE-412 96, Sweden

Received:2004-02-28 Online:2004-12-24 Published:2011-08-06
Supported by:
Supported by the Science and Technology Bureau of Jilin Province(No.20020615) and The Overseas-back Scholar Program of Ministry of Personnel of China.

Abstract

Abstract: A series of GaN layers was grown on sapphire (0001) substrates under various growth conditions by means of the molecular beam epitaxy(MBE) method, the optical characteristics and surface morphologies of the samples were studied. The results show that the line width of the GaN emission gradually decreases and the peak shifts under the Ga-rich condition by increasing the Ga-flux on keeping all other growth conditions unchanged. It has been also found that the resulted morphology is directly related to the Ga-flux.

Key words: Molecular beam epitaxy, Photoluminescence, Morphology

YANG Jing-hai, GONG Jie, FAN Hou-gang, YANG Li-li, ZHANG Yong-jun, Zsebk O., CHEN Gang . Effects of Ga-flux on Optical Properties and Morphology of GaN Grown via Molecular Beam Epitaxy[J]. Chemical Research in Chinese Universities, 2004, 20(6): 747-750.

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Effects of Ga-flux on Optical Properties and Morphology of GaN Grown via Molecular Beam Epitaxy

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