Recent Advances in Electron-doping of Quantum Dots: Synthesis, Optical Properties, and Optoelectronic Applications

doi:10.1007/s40242-026-6133-x

Abstract

Abstract: Stably and controllably doping free carriers, here specifically free electrons, into colloidal quantum dots (QDs) is central to realizing their size-tunable optical and optoelectronic properties. Unlike bulk semiconductors, aliovalent atomic doping in QDs is challenging due to self-purification mechanism. This mini-review focuses on recent advances in one type of unique doping strategies for QDs (i.e., remote electron-doping into their quantum-confined conduction band), including chemical, electrochemical, and photochemical approaches. We discuss optical properties, many-body interactions, and Fermi-level shifts of n-doped QDs. Impacts of n-doping on low-threshold optical gain, infrared intraband emission and detection, and charge-transport layers in devices are discussed.

Key words: Quantum dot, Electron doping, Optoelectronics

LEI Haixin, WANG Zhe, LIN Xing, PENG Xiaogang. Recent Advances in Electron-doping of Quantum Dots: Synthesis, Optical Properties, and Optoelectronic Applications[J]. Chemical Research in Chinese Universities, 2026, 42(4): 1162-1176.

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