Preparation of c-Axis Oriented LiNb1-xTaxO3 Films on Si(111) Substrates by a Modified Sol-gel Process

Chemical Research in Chinese Universities ›› 2002, Vol. 18 ›› Issue (3): 255-257.

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Preparation of c-Axis Oriented LiNb_1-xTa_xO₃ Films on Si(111) Substrates by a Modified Sol-gel Process

QIANG Liang-sheng¹, FU Hong-gang²

1. Department of Applied Chemistry, Harbin Institute of Technology, Harbin 150001, P. R. China;
2. School of Chemistry and Engineering, Heilongiang University, Harbin 150080, P. R. China

Received:2001-08-28 Online:2002-08-24 Published:2011-08-04
Supported by:
Supported by the National Natural Science Foundation of China(No.20171015).

Abstract

Abstract: In this work, we succeeded in the preparation of LiNb_1-xTa_xO₃ films on Si(111) substrates by means of sol-gel process, and the usual sol-gel process for the preparation of LiNbO₃ and LiTaO₃ films on Si substrates was improved by adding a 33% aqueous solution of CH₃CH₂OH to the mixed sols of LiNb(OCH₂CH₃)₆ and LiTa(OCH₂CH₃)₆. The crystallization behavior of LiNb_1-xTa_xO₃ films on Si(111) substrates has been studied. Highly c-axis oriented LiNb_1-xTa_xO₃ films have been obtained within the tantalum composition range of 0<x<0.33. Some factors such as the hydrogen termination of the silicon surface, the RTP annealing process that provides the unidirectional heat flow and the preheating temperature are discussed to analyze the crystallization of the c-axis oriented films.

Key words: LiNb_1-xTa_xO₃ film, Crystallization behavior, Si substrate, Sol-gel

QIANG Liang-sheng, FU Hong-gang. Preparation of c-Axis Oriented LiNb_1-xTa_xO₃ Films on Si(111) Substrates by a Modified Sol-gel Process[J]. Chemical Research in Chinese Universities, 2002, 18(3): 255-257.

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Preparation of c-Axis Oriented LiNb_1-xTa_xO₃ Films on Si(111) Substrates by a Modified Sol-gel Process

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