Effect of Doped Boron on the Properties of ZnO Thin Films Prepared by Sol-gel Spin Coating

doi:10.1007/s40242-014-3497-0

Chemical Research in Chinese Universities ›› 2014, Vol. 30 ›› Issue (3): 509-512.doi: 10.1007/s40242-014-3497-0

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Effect of Doped Boron on the Properties of ZnO Thin Films Prepared by Sol-gel Spin Coating

WEN Bin¹, LIU Chaoqian¹, FEI Weidong^2,3, WANG Hualin¹, LIU Shimin¹, WANG Nan¹, CHAI Weiping¹

1. Engineering Research Center of Optoelectronic Materials and Devices, School of Materials Science and Engineering, Dalian Jiaotong University, Dalian 116028, P. R. China;
2. School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, P. R. China;
3. School of Mechanical Engineering, Qinghai University, Xining 810016, P. R. China

Received:2013-11-13 Revised:2014-03-04 Online:2014-06-01 Published:2014-03-11
Contact: LIU Chaoqian, FEI Weidong E-mail:cqliu@djtu.edu.cn;wdfei@djtu.edu.cn
Supported by:
Supported by the National Natural Science Foundation of China(Nos.51002018, 51302024), the Program for Liaoning Excellent Talents in University, China(No.LJQ20122038), the Higher Specialized Research Fund for the Doctoral Program of China(No.20122124110004), the Dalian Science and Technology Plan Project, China(No.2010J21DW008) and the Qinghai Provincial Science and Technology Project, China(No.2012-Z-701).

Abstract

Abstract:

Transparent conductive boron-doped ZnO thin films were prepared by sol-gel spin coating method. The effect of doped boron concentration on the properties of the films was systematically discussed. The films were characterized by X-ray diffraction, atomic force microscopy, spectrophotometry, and Hall effect measurement system. All the doped and undoped ZnO films were of a single hexagonal structure, and showed a preferred orientation of (002). The particle size and surface roughness of the films decreased with increased doped boron concentration. All the films exhibited an average transmittance of approximate 90% in visible-light region and an energy gap of about 3.3 eV. The maximum carrier concentration, the highest carrier mobility and the lowest resistivity were observed at a doped boron concentration of 0.5%(molar fraction). Based on these results, we suggested that the saturation concentration of doped boron in ZnO film is 0.5%(molar fraction).

Key words: Boron-doped ZnO, Sol-gel, Transparent conductive oxide

WEN Bin, LIU Chaoqian, FEI Weidong, WANG Hualin, LIU Shimin, WANG Nan, CHAI Weiping. Effect of Doped Boron on the Properties of ZnO Thin Films Prepared by Sol-gel Spin Coating[J]. Chemical Research in Chinese Universities, 2014, 30(3): 509-512.

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Effect of Doped Boron on the Properties of ZnO Thin Films Prepared by Sol-gel Spin Coating

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