Chemical Research in Chinese Universities ›› 2005, Vol. 21 ›› Issue (5): 583-586.

• Articles • Previous Articles     Next Articles

Effects of ZnO Buffer Layer Thickness on Properties of MgxZn1-xO Thin Films Deposited by MOCVD

DONG Xin, LIU Da-li, DU Guo-tong, ZHANG Yuan-tao, ZHU Hui-chao, YAN Xiao-long, GAO Zhong-min   

  1. State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, P. R. China
  • Received:2004-11-10 Online:2005-09-23 Published:2011-08-06
  • Supported by:

    Supported by the 863 Project(No.2001AA311130).

Abstract: High-quality MgxZn1-xO thin films were grown on sapphire(0001) substrates with a ZnO buffer layer of different thicknesses by means of metal-organic chemical vapor deposition. Diethyl zinc, bis-cyclopentadienyl-Mg and oxygen were used as the precursor materials. The crystalline quality, surface morphologies and optical properties of the MgxZn1-xO films were investigated by X-ray diffraction, atomic force microscopy and photoluminescence spectrometry. It was shown that the quality of the MgxZn1-xO thin films depends on the thickness of the ZnO buffer layer and an MgxZn1-xO thin film with a ZnO buffer layer whose thickness was 20 nm exhibited the best crystal-quality, optical properties and a flat and dense surface.

Key words: MgxZn1-xO, ZnO Buffer layer, Sapphire substrate, MOCVD, AFM