Selective Growth of GaN on Slope Cone-shaped Patterned Sapphire Substrate

doi:10.1007/s40242-014-3556-6

Chemical Research in Chinese Universities ›› 2014, Vol. 30 ›› Issue (4): 556-559.doi: 10.1007/s40242-014-3556-6

Selective Growth of GaN on Slope Cone-shaped Patterned Sapphire Substrate

YANG Dechao^1,2, LIANG Hongwei^3,4, QIU Yu³, LI Pengchong³, LIU Yang³, SHEN Rensheng³, XIA Xiaochuan³, YU Zhennan⁵, CHANG Yuchun¹, ZHANG Yuantao¹, DU Guotong^1,3

1. State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, P. R. China;
2. Department of Electronic Engineering, Dalian Neusoft University of Information, Dalian 116024, P. R. China;
3. School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024, P. R. China;
4. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, P. R. China;
5. Zhejiang Crystal-optech Co., Ltd., Taizhou 318015, P. R. China

Online:2014-08-01 Published:2014-04-21
Contact: ZHANG Yuantao E-mail:zhangyt@jlu.edu.cn
Supported by:
Supported by the National Natural Science Foundation of China(Nos.61223005, 61376046), the Program for New Century Excellent Talents in University of China(Nos.NCET-12-0236, NCET-13-0254), the Science and Technology Developing Project of Jilin Province, China (No.20130204032GX) and the Opening Project of Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory in the Fifth Electronics Research Institute of Ministry of Industry and Information Technology of China(No.ZHD201204).

Abstract

Abstract:

Cone-shaped patterned sapphire substrate was prepared by inductively coupled plasma etching and GaN nucleation layer was grown on it by metal-organic chemical vapor deposition. A selective growth of GaN nucleation layer was found on the slope of the cone-shaped patterned sapphire substrat, and the distribution morphology of GaN had significantly changed after it was recrystallized. GaN selective growth and redistribution were analyzed by investigating the distribution of crystallographic planes on the cone surface and the atom array of specific planes at atom level.

Key words: Patterned sapphire substrate, GaN, Selective growth, Crystallographic plane

YANG Dechao, LIANG Hongwei, QIU Yu, LI Pengchong, LIU Yang, SHEN Rensheng, XIA Xiaochuan, YU Zhennan, CHANG Yuchun, ZHANG Yuantao, DU Guotong. Selective Growth of GaN on Slope Cone-shaped Patterned Sapphire Substrate[J]. Chemical Research in Chinese Universities, 2014, 30(4): 556-559.

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Selective Growth of GaN on Slope Cone-shaped Patterned Sapphire Substrate

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