Chemical Research in Chinese Universities ›› 2004, Vol. 20 ›› Issue (4): 411-416.

• Articles • Previous Articles     Next Articles

X-ray Multiple Diffraction Topographic Imaging Technique For Growth History Study of Habit Modifying Impurity Doped Crystals

LAI X.1, MA C.1, K. J. Robert1, M. C. Miller2   

  1. 1. Institute of Particle Science and Engineering, Department of Chemical Engineering, University of Leeds, Leeds LS2 9JT, UK;
    2. CCLRC Daresbury Laboratory, Daresbury, Warrington, Cheshire WA4 4AD, UK
  • Received:2004-06-03 Online:2004-08-24 Published:2011-08-06
  • Supported by:

    Supported by EPSRC, the UK Research Council(No.GRIR 65787).

Abstract: A novel crystal characterization instrument has been built up in which a combination of X-ray multiple diffraction and X-ray topography is applied to enabling the cross-correlation between micro-crystallographic symmetry and its spatial dependence in relation to lattice defects.This facility is used to examine, in a selfconsistent manner, growth sector-dependant changes to both the crystallographic structure and the lattice defects associated with the action of habit-modifying additives in a number of representative crystal growth systems.In addition, the new instrument can be used to probe micro-crystallographic aspects (such as distortion to crystal symmetry) and relate these in a spatially resolved manner to the crystal defect structure in crystals doped with known habit modifiers.

Key words: X-ray diffraction, X-ray multiple diffraction, X-ray topography, Habit modification, Crystalgrowth, Growth defects