CRCU

Chemical Research in Chinese Universities ›› 2003, Vol. 19 ›› Issue (4): 383-385.

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Influence of Annealing on Properties of ZnO Films Grown via Plasma-enhanced MOCVD

ZHAO Bai-jun, DU Guo-tong, YANG Hong-jun, WANG Jinz-hong, ZHANG Yuan-tao, YANG Xiao-tian, LIU Bo-yang, MA Yan, YANG Tian-peng, LIU Da-li, LI Wan-cheng, FANG Xiu-jun   

  1. College of Electronics and Engineering, Jilin University, Changchun 130023, P. R. China
  • Received:2003-03-07 Online:2003-12-24 Published:2011-08-06
  • Supported by:

    Supported by the National Natural Science Foundation of China(No.60176026, 60177007), and 863 project(No.2001AA311130).

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Abstract: The structural and the optical properties of ZnO films with high quality grown via plasma-enhanced metal-organic chemical vapour deposition(MOCVD) on C-plane sapphire substrate were studied. The crystallinity and the optical properties of the films are greatly improved having been annealed in oxygen plasma atmosphere. The structure, the band gap and the binding energy of O1s electrons, and the molar ratio of O to Zn were determined by X-ray diffraction(XRD), photoluminescence(PL) and X-ray photoelectron scan methods. For both the annealed and the as-grown films, the exciton peak features were observed at room temperature. The band-edge photoluminescence of the annealed film is much stronger than that of the as-grown film, and the exciton peak relating to the deep level at 439 nm disappears. The molar ratio of O to Zn in the annealed film is 0.91, while it is 0.78 for the as-grown film.

Key words: Plasma-enhanced MOCVD, Sapphire, Substrate