CRCU

Chemical Research in Chinese Universities ›› 1992, Vol. 8 ›› Issue (4): 477-479.

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Preparation of the In2O3·Sn Films by MO-CVD Technique

LUO Wen-xiu1, REN Peng-cheng1, TAN Zhong-ke1, LI Zhi-ping2   

  1. 1. Center for Fimctional Materials Rcscarch, Qingdao Institute ofChemical Technology, Qingdao, 266042;
    2. Department of Applied Chemistry, Qingdao University, Qingdao, 266071
  • Received:1991-10-23 Online:1992-12-24 Published:2011-08-17
  • Supported by:

    Supported by the National Natural Science Foundation of China

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Abstract: Introduction In2O3·Sn films have high transparency(>95％) within the visible spectral region, low resistivity(10-2-10-4 ohm·cm) at room temperature and superior thermal stability. These films have been applied to solar cells, electronics and photoelectronics fields. In recent years, organometallic-CVD method has emerged as a successful alternate to the physical methods and general CVDfor the growth of these films.

Key words: Metallorganic chemical vapour deposition (MOCVD), Tin doped, Indium oxide