Amorphous Structure and Bonding Chemistry of Aluminium Antimonide(AlSb) Alloy for Phase-change Memory Device

doi:10.1007/s40242-016-5345-x

Chemical Research in Chinese Universities ›› 2016, Vol. 32 ›› Issue (1): 76-81.doi: 10.1007/s40242-016-5345-x

• Articles • Previous Articles Next Articles

Amorphous Structure and Bonding Chemistry of Aluminium Antimonide(AlSb) Alloy for Phase-change Memory Device

SUN Yu¹, WANG Xuepeng¹, DU Jiaren¹, CHEN Nianke¹, YU Hongmei², WU Qi², MENG Xing³

1. State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering;
2. College of Computer Science and Technology, Changchun 130012, P. R. China;
3. College of Physics, Jilin University, Changchun 130012, P. R. China

Received:2015-09-02 Revised:2015-09-28 Online:2016-02-01 Published:2015-11-23
Contact: WANG Xuepeng, YU Hongmei E-mail:wangxpjlu@foxmail.com;hmyu@jlu.edu.cn
Supported by:
Supported by the China Postdoctoral Science Foundation(No.2013T60315) and the National Natural Science Foundation of China(No.11374119).

Abstract

Abstract:

With the help of first-principles molecular dynamics calculations, we obtained the atomic picture of amorphous AlSb(a-AlSb) for phase-change memory application. Generally, a-AlSb shows sp³ bonding network, which is the intrinsic characteristic for its good thermal stability. Significant wrong(homogenous) Al-Al bonds can also be observed from the pair correlation function. This hints the amorphous phase may consist of Al cluster and Sb-rich Al-Sb alloy. Recent experiment has observed the Sb-rich region of AlSb alloy can be switched to crystal, on the basis of which, combined with our calculations, we thus propose that on the one hand such a Sb-rich region in a-AlSb can retain the rapid crystallization like pure Sb solid and on the other hand some Al atoms play the important role of stabilizing Sb rich network with sp³ bonding. The present study offers a microscopic view to understand the phase change mechanism of AlSb alloy for information storage device.

Key words: AlSb alloy, Amorphous phase, Phase-change memory device, Ab initio calculation

SUN Yu, WANG Xuepeng, DU Jiaren, CHEN Nianke, YU Hongmei, WU Qi, MENG Xing. Amorphous Structure and Bonding Chemistry of Aluminium Antimonide(AlSb) Alloy for Phase-change Memory Device[J]. Chemical Research in Chinese Universities, 2016, 32(1): 76-81.

References

[1] Wuttig M., Yamada N., Nat. Mater., 2007, 6, 824
[2] Li X. B., Liu X. Q., Han X. D., Zhang S. B., Phys. Status Solidi B, 2012, 249, 1861
[3] Ovshinsky S. R., Phys. Rev. Lett., 1968, 21, 1450
[4] Lencer D., Salinga M. M., Wuttig M., Adv. Mater., 2011, 23, 2030
[5] Hosseini M., Rebic S., Sparkes B. M., Teamley J., Buchler B. C., Lam P. K., Light:Sci. Appl., 2012, 1, e40
[6] Los J. H., Kühne T. D., Gabard S., Bernasconi M., Phys. Rev. B, 2013, 88, 174203
[7] Zhu M., Xia M. J., Rao F., Li X. B., Wu L. C., Ji X. L., Lü S. L., Song Z. T., Feng S. L., Sun H. B., Zhang S. B., Nat. Commun., 2014, 5, 4086
[8] Wang X. P., Chen N. K., Li X. B., Cheng Y., Liu X. Q., Xia M. J., Song Z. T., Han X. D., Zhang S. B., Sun H. B., Phys. Chem. Chem. Phys., 2014, 16, 10810
[9] Yamada N., Ohno E., Nishiuchi K., Akahira N., Takao M., J. Appl. Phys., 1991, 69, 2849
[10] Alola J., Larrucea J., Jones R. O., Phys. Rev. B, 2011, 83, 094113
[11] Maeda T., Terao M., Shimano T., Jpn. J. Appl. Phys., 2003, 42, 1044
[12] Xiang C. Y., Koo W., So F., Sasabe H., Kido J., Light:Sci. Appl., 2013, 2, e80
[13] Chen N. K., Li X. B., Wang X. P., Xia M. J., Xie S. Y., Wang H. Y., Song Z. T., Zhang S. B., Sun H. B., Acta Mater., 2015, 90, 88
[14] Cabral C., Krusin-Elbaum L., Bruley J., Raoux S., Deline V., Madan A., Pinto T., Appl. Phys. Lett., 2008, 93, 071906
[15] van Pieterson L., van Schijndel M., Rijpers J. C. N., Kaiser M., Appl. Phys. Lett., 2003, 83, 1373
[16] Callan J. P., Kim A. M. T., Roeser C. A. D., Mazur E., Phys. Rev. Lett., 2001, 86, 3650
[17] Zhang T., Song Z. T., Wang F., Liu B., Feng S. L., Chen B., Appl. Phys. Lett., 2007, 91, 222102
[18] Zhou X. L., Wu L. C., Song Z. T., Rao F., Ren K., Peng C., Song S. N., Liu B., Feng S. L., Appl. Phys. Lett., 2013, 103, 072114
[19] Liu X. Q., Li X. B., Zhang L., Cheng Y. Q., Yan Z. G., Xu M., Han X. D., Zhang S. B., Zhang Z., Ma E., Phys. Rev. Lett., 2011, 106, 025501
[20] Kolobov A. V., Fons P., Frenkel A. I., Ankudinov A. L., Tominaga J., Uruga T., Nat. Mater., 2004, 3, 703
[21] Li X. B., Liu X. Q., Liu X., Han D., Zhang Z., Han X. D., Sun H. B., Zhang S. B., Phys. Rev. Lett., 2011, 107, 015501
[22] Shportko K., Kremers S., Woda M., Lencer D., Roberson J., Wuttig M., Nat. Mater., 2008, 7, 653
[23] Kohn W., Sham L. J., Phys. Rev., 1965, 140, A1133
[24] Hohenberg P., Kohn W., Phys. Rev., 1964, 136, B86
[25] Kresse G., Furthmüller J., Phys. Rev. B, 1996, 54, 11169
[26] Zhao H., Zhou L., Wei D. S., Zhou X. J., Shi H. F., Chem. J. Chinese Universities, 2014, 35(8), 1731
[27] Blöchl P. E., Phys. Rev. B, 1994, 50, 17953
[28] Han D., West D., Li X. B., Xie S. Y., Sun H. B., Zhang S. B., Phys. Rev. B, 2010, 82, 155132
[29] Perdew J. P. Wang Y., Phys. Rev. B, 1986, 33, 8800
[30] Perdew J. P., Burke K., Ernzerhof M., Phys. Rev. Lett., 1996, 77, 3865
[31] Blunt R. F., Frederikse H. P. R., Becker J. H., Hosler W. R., Phys. Rev., 1954, 96, 578
[32] Herczog A., Haberecht R. R., Middleton A. E., J. Electrochem. Soc., 1958, 105, 533
[33] Wang Y., Zhang X. C., Zhao L. J., Zhao X. X., Shi B. P., Fan C. M., Chem. J. Chinese Universities, 2014, 35(12), 2624
[34] Pyykkö P., Atsumi M., Chem. Eur. J., 2009, 15, 186
[35] Xu M., Cheng Y. Q., Sheng H. W., Ma E., Phys. Rev. B, 2009, 103, 195502
[36] Kalikka J., Akola J., Jones R. O., J. Phys:Condens. Matter., 2013, 25, 115801
[37] Savin A., Jepsen O., Flad J., Andersen O. K., Preuss H., von Schnering H. G., Angew. Chem. Int. Ed. Engl., 1992, 30, 187
[38] Krba M., Kolobov A. V., Fons P., Tominaga J., Elliott S. R., Hegedus J., Uruga T., Phys. Rev. B, 2011, 83, 054203

Amorphous Structure and Bonding Chemistry of Aluminium Antimonide(AlSb) Alloy for Phase-change Memory Device

Knowledge

Abstract

Cite this article

share this article

References

Related Articles 7

Recommended Articles

Metrics

Comments

[1]	ZHAO Zhongrui, SONG Jinou, SU Boyang, WANG Xiaowen. Theoretical Study on the Kinetics for the Reactions of Heptyl Radicals with Methanol [J]. Chemical Research in Chinese Universities, 2018, 34(5): 786-791.
[2]	WANG Zhao-xu, ZHENG Bai-shu, ZHANG Jing-chang and CAO Wei-liang. Theoretical Investigation on Intermolecular Interactions Between HCCF and HCCR(R=F, Cl, Br) [J]. Chemical Research in Chinese Universities, 2009, 25(6): 929-935.
[3]	YU Qing, CAO Jie, LIU Tao and WANG Zhi-xiang. Fluorescence-quenching of Tryptophan Ion-18-crown-6 Complex——A Different Observation from Its Neutral Counterpart [J]. Chemical Research in Chinese Universities, 2009, 25(3): 362-367.
[4]	ZHANG Zhi-jie, LIU Yu-hua, LÜ Zhong-yuan , LI Ze-sheng. Rotational Isomeric State Model of Poly(vinylidene chloride) Based Upon ab initio Electronic Structure Calculations [J]. Chemical Research in Chinese Universities, 2009, 25(1): 108-111.
[5]	YAN Liu-ming , LU Wen-cong. Modulating Bandgap and HOCO/LUCO Energy of Semiconducting Polymer by Copolymerization or Incorporation of Electron Withdrawing/Releasing Groups [J]. Chemical Research in Chinese Universities, 2007, 23(5): 598-601.
[6]	SHI Shou-heng, SHI Chuan, Zhang Shao-yin, Dai Hong-yi. A Theoretical Study of the Mechanism for the Photodecomposition of AgN₃ [J]. Chemical Research in Chinese Universities, 2001, 17(2): 202-206.
[7]	ZHU Rong-shun, DAI Shushan, HUANG Jian-hua, YE Song. Ab initio Studies on the Reaction of M⁺+CH₄→M⁺CH₂+H₂(M=Sc,Y,La) [J]. Chemical Research in Chinese Universities, 1996, 12(4): 368-373.