CRCU

Chemical Research in Chinese Universities ›› 2012, Vol. 28 ›› Issue (4): 712-715.

• Articles • Previous Articles     Next Articles

Preparation and Photovoltaic Properties of p-Type Nano-ZnFe2O4

LI Zi-heng1,2, ZOU Xu1, LI Gen2, ZOU Guang-tian1   

  1. 1. State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012, P. R. China;
    2. College of Physics, Jilin University, Changchun 130012, P. R. China
  • Received:2011-10-14 Revised:2011-12-21 Online:2012-07-25 Published:2012-07-25
  • Contact: Zi-Heng LI E-mail:liziheng@jlu.edu.cn
  • Supported by:

    Supported by the National Natural Science Foundation of China(No.20803031), the Specialized Research Fund for Basic Research and Operating Expenses of Jilin University, China(No.200903327), the National Fund for Fostering Talents of Basic Science, China(No.J1103202) and the Open Topic of State Key Laboratory of Superhard Materials, China(No.200904).

PDF (PC)

Abstract: p-Type nano-ZnFe2O4 semiconductors were gained by high-prssure treatment. Surface photovoltaic spectrum(SPS) and transient photovoltaic technology(TPV) were used for studying the photogenerated charge of nano-ZnFe2O4. Results show that the photovoltaic behavior of nano-ZnFe2O4 changed as the processing pressure increased. When the processing pressure was higher than 2 GPa, both SPS response interval and peak changed significantly. XPS results show that the non-lattice oxygen entered into the lattice and the content of lattice oxygen increased with the increase of processing pressure. The material changed from oxygen vacancy type to oxygen excess type and the photoelectric properties changed from n-type to p-type when the processing pressure is higher than 2 GPa.

Key words: High-pressure treatment, p-Type nano-ZnFe2O4, Photovoltaic behavior