Chemical Research in Chinese Universities ›› 2009, Vol. 25 ›› Issue (6): 786-790.

• Articles • Previous Articles     Next Articles

Influence of Transparent Anode on Luminescent Performance of Near-infrared Organic Light-emitting Diodes

GUAN He-song1, CHENG Chuan-hui2, LI Wan-cheng1, GENG Dong-feng3, FAN Zhao-qi2, CHANG Yu-chun1, ZHAO Wang2, GUO Zhen-qiang1 and DU Guo-tong1,2*   

  1. 1. State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, P. R. China;
    2. School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024, P. R. China;
    3. China Airborne Missile Academy, Luoyang 471009, P. R. China
  • Received:2009-03-17 Revised:2009-05-11 Online:2009-11-25 Published:2010-01-25
  • Contact: DU Guo-tong. E-mail: dugt@mail.jlu.edu.cn
  • Supported by:

    Supported by the National Natural Science Foundation of China(No.60807009), Specialized Research Fund for the Doctoral Program of Higher Education of China(No.200801411038) and Young Teacher Foundation of Dalian University of Technology, China(No.3005-893212).

Abstract:

The optical transmission(200―2000 nm), sheet resistance and work functions of indium-tin oxide(ITO)(100 Ω/□), ITO(12 Ω/□), zinc-oxide(ZnO), aluminum-doped ZnO(AZO) and polyaniline(PANI) films were investigated. Near-infrared organic light-emitting diodes(NIR-OLEDs) emitting around 1.54 μm based on Er(DBM)3Phen with ITO(100 Ω/□), ITO(12 Ω/□) and PANI as anodes, respectively, were fabricated. The device structure was anode/4''-tris(N-3-methylphenyl-N-phenyl-amino)-triphenylamine(m-MTDATA)/N,N′-di-1-naphthyl-N,N′-diphenylbenzidine(NPB)/Er(DBM)3Phen/tris-(8-hydroxyquinoline) aluminum(Alq3)/Al. The results suggest that the performance of NIR-OLEDs with ITO(100 Ω/□), which has a lower Sn content, as anodes appear to be better than that of NIR-OLEDs with ITO(12 Ω/□) and PANI as anodes, respectively. The high NIR transmittance of ITO(100 Ω/□) is a major reason for the relatively high NIR EL efficiency. The more balanced holes and electrons in the device based on ITO(100 Ω/□) are another reasons.

Key words: Transparent electrode; Near-infrared(NIR); Organic light-emitting diode(OLED)