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Chemical Research in Chinese Universities ›› 2006, Vol. 22 ›› Issue (4): 427-431.

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Dependence of Performance of Organic Light-emitting Devices on Sheet Resistance of Indium-tin-oxide Anodes

ZHOU Liang, ZHANG Hong-jie, YU Jiang-bo, MENG Qing-guo, PENG Chun-yun, LIU Feng-yi, DENG Rui-ping, PENG Ze-ping, LI Zhe-feng   

  1. Key Laboratory of Rare Earth Chemistry and Physics, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022, P. R. China
  • Received:2005-12-21 Online:2006-08-24 Published:2011-08-06
  • Supported by:

    Supported by the National Natural Science Foundation of China(No. 20372060), the Key National Natural Science Foundation of China(No. 20131010), the Important National Natural Science Foundation of China(No. 20490210), the "863" Program(Nos. 2002AA302105 and 2002AA324080) and Foreign Communion & Cooperation of National Natural Science Foundation of China(No. 20340420326).

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Abstract: The dependence of the performance of organic light-emitting devices(OLEDs) on the sheet resistance of indium-tin-oxide(ITO) anodes was investigated by measuring the steady state current density brightness voltage characteristics and the electroluminescent spectra. The device with a higher sheet resistance anode shows a lower current density, a lower brightness level, and a higher operation voltage. The electroluminescence(EL) efficiencies of the devices with the same structure but different ITO anodes show more complicated differences. Furthermore, the shift of the light-emitting zone toward the anode was found when an anode with a higher sheet resistance was used. These performance differences are discussed and attributed to the reduction of hole injection and the increase in voltage drop over ITO anode with the increase in sheet resistance.

Key words: Organic light-emitting device(OLED), Indium-tin-oxide(ITO), Sheet resistance, Balance of holes and electrons