Multilevel Memory: Multiple Conductance Switch and Construction Method

doi:10.1007/s40242-025-5230-6

Abstract

Abstract: With the exponential growth of digital information, it is essential to move beyond single storage states and develop multilevel storage for high-density memory devices. However, systematic strategies for constructing multilevel memories remain underexplored. This review summarizes key approaches from both intrinsic material design (e.g., coupling multiple memory mechanisms, introducing electronic defects, functional group modification, charge-trapping engineering, and redox center design) and extrinsic regulation (e.g., tuning testing parameters, applying light/irradiation/magnetic fields, doping, and size effects). Furthermore, diverse functional materials have been employed, including inorganic compounds, organic and polymeric materials, low-dimensional systems, and functional materials, such as magnetoelectric, biomaterials, and composites. We suggest that continued attention to multilevel memory applications will accelerate progress and inspire further advances in this field.

Key words: Memristor, Multilevel memory, Material design and regulation, Functional material

SONG Yaru, WU Guoling, LEI Shengbin, HU Wenping. Multilevel Memory: Multiple Conductance Switch and Construction Method[J]. Chemical Research in Chinese Universities, 2025, 41(6): 1447-1468.

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