Electrically Stimulated Band Alignment Transit in Black Phosphorus/ β-Ga2O3 Heterostructure Dual-band Photodetector

doi:10.1007/s40242-020-0177-0

Chemical Research in Chinese Universities ›› 2020, Vol. 36 ›› Issue (4): 703-708.doi: 10.1007/s40242-020-0177-0

• Articles • Previous Articles Next Articles

Electrically Stimulated Band Alignment Transit in Black Phosphorus/ β-Ga₂O₃ Heterostructure Dual-band Photodetector

LI Chang^1,2, XIE Liu^2,3, HE Tao⁴, ZHANG Yan^2,3, DONG Zhuo^2,3, YANG Zeyuan^1,2, ZHANG Xiaodong⁴, WANG Zhongchang⁵, ZHANG Kai²

1. Nano Science and Technology Institute, University of Science and Technology of China, Suzhou 215123, P. R. China;
2. i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics(SINANO), Chinese Academy of Sciences, Suzhou 215123, P. R. China;
3. School of Nano Technology and Nano Bionics, University of Science and Technology of China, Hefei 230026, P. R. China;
4. CAS Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics(SINANO), Chinese Academy of Sciences, Suzhou 215123, P. R. China 5. International Iberian Nanotechnology Laboratory(INL), Avenida Mestre José Veiga s/n, Braga 4715-330, Portugal

Received:2020-06-10 Revised:2020-07-07 Online:2020-08-01 Published:2020-07-30
Contact: ZHANG Kai E-mail:kzhang2015@sinano.ac.cn
Supported by:
Supported by the National Natural Science Foundation of China(Nos.61922082, 61875223, 61927813), the Natural Science Foundation of Jiangsu Province, China(No.BK20191195) and the National Key R&D Program of China(No.2016YFE0105700).

Abstract

Abstract: In recent decades, dual-band photodetectors have received widespread attention due to better target identification, which are considered as the development trend of next generation photodetectors. However, the traditional dual-band photodetectors based on heteroepitaxial growth, superlattice and multiple quantum well structures are limited by complex fabrication process and low integration. Herein, we report a UV/IR dual-band photodetector by integrating ultra-wide gap β-Ga₂O₃ and narrow-gap black phosphorous(BP) nanoflakes. A vertical van der Waals (vdW) heterostructure is formed between BP and β-Ga₂O₃ by mechanically exfoliated method integrated without the requirement of lattice match. The heterostructure devices show excellent rectification characteristics with high rectifying ratio of ca. 10⁶ and low reverse current around pA. Moreover, the device displays obvious photoresponse under UV and IR irradiations with responsivities of 0.87 and 2.15 mA/W, respectively. We also explore the band alignment transit within the heterostructure photodetector at different bias voltages. This work paves the way for fabricating novel dual-band photodetectors by utilizing 2D materials.

Key words: Black phosphorous, β-Gallium oxide, van der Waals heterostructure, Dual-band photodetector

LI Chang, XIE Liu, HE Tao, ZHANG Yan, DONG Zhuo, YANG Zeyuan, ZHANG Xiaodong, WANG Zhongchang, ZHANG Kai. Electrically Stimulated Band Alignment Transit in Black Phosphorus/ β-Ga₂O₃ Heterostructure Dual-band Photodetector[J]. Chemical Research in Chinese Universities, 2020, 36(4): 703-708.

References 31

[1]	Lee M. K., Chu C. H., Wang Y. H., Sze S. M., Opt. Lett., 2001,26, 160
[2]	Rogalski A., Rep. Prog. Phys., 2005, 68, 2267
[3]	Grein C. H., Young P. M., Flatte M. E., Ehrenreich H., J. Appl. Phys., 1995, 78, 7143
[4]	Dai M., Chen H., Feng R., Feng W., Hu Y., Yang H., Liu G., Chen X., Zhang J., Xu C. Y., Hu P., ACS Nano, 2018, 12, 8739
[5]	Wang P., Liu S., Luo W., Fang H., Gong F., Guo N., Chen Z. G., Zou J., Huang Y., Zhou X., Wang J., Chen X., Lu W., Xiu F., Hu W., Adv. Mater., 2017, 29, 1604439
[6]	Xu X., Deng W., Zhang X., Huang L., Wang W., Jia R., Wu D., Zhang X., Jie J., Lee S. T., ACS Nano, 2019, 13, 5910
[7]	Haddadi A., Dehzangi A., Chevallier R., Adhikary S., Razeghi M., Sci. Rep., 2017,7, 3379
[8]	Su L., Chen H., Xu X., Fang X., Laser Photonics Rev., 2017, 11, 1700222
[9]	Li L., Chen H., Fang Z., Meng X., Zuo C., Lv M., Tian Y., Fang Y., Xiao Z., Shan C., Xiao Z., Jin Z., Shen G., Shen L., Ding L., Adv. Mater., 2020, 1907257
[10]	Novoselov K. S., Geim A. K., Morozov S. V., Jiang D., Zhang Y., Dubonos S. V., Grigorieva I. V., Firsov A. A., Science, 2004, 306, 666
[11]	Radisavljevic B., Radenovic A., Brivio J., Giacometti V., Kis A., Nature Nanotech., 2011, 6, 147
[12]	Li L., Yu Y., Ye G., Ge Q., Ou X., Wu H., Feng D., Chen X., Zhang Y., Nature Nanotech., 2014, 9, 372
[13]	Geim A. K., Grigorieva I. V., Nature, 2013, 499, 419
[14]	Hou N., Konstantatos G., Adv. Mater., 2018, 30, 1801164
[15]	Long M., Wang P., Fang H., Hu W., Adv. Funct. Mater., 2019, 29, 1803807
[16]	Fang J., Zhou Z., Xiao M., Lou Z., Wei Z., Shen G., InfoMat, 2019, 1, 27
[17]	Lopez-Sanchez O., Lembke D., Kayci M., Radenovic A., Kis A., Nature Nanotech., 2013, 8, 497
[18]	Lou Z., Zeng L., Wang Y., Wu D., Xu T., Shi Z., Tian Y., Li X., Tsang Y. H., Opt. Lett., 2017, 42, 3335
[19]	Deng J., Zong L., Bao W., Zhu M., Liao F., Guo Z., Xie Y., Lu B., Wan J., Zhu J., Peng R., Chen Y., Adv. Opt. Mater., 2019, 7, 1901039
[20]	Tong J., Tobing L. Y. M., Luo Y., Zhang D., Zhang D., Sci. Rep., 2018, 8, 1548
[21]	Huang Z., Jiang Y., Han Q., Yang M., Han J., Wang F., Luo M., Li Q., Zhu H., Liu X., Guo J., Wang J., Nanotechnology, 2020, 31, 064001
[22]	He T., Zhang X., Ding X., Sun C., Zhao Y., Yu Q., Ning J., Wang R., Yu G., Lu S., Zhang K., Zhang X., Zhang B., Adv. Opt. Mater., 2019, 7, 1801563
[23]	Kong W., Wu G., Wang K., Zhang T., Zou Y., Wang D., Luo L., Adv. Mater., 2016, 28, 10725
[24]	Feng W., Wang X., Zhang J., Wang L., Zheng W., Hu P., Cao W., Yang B., J. Mater. Chem. C, 2014, 2, 3254
[25]	Barman S. K., Huda M. N., Phys. Status Solidi Rapid Res. Lett., 2019, 13, 1800554
[26]	Buscema M., Groenendijk D. J., Blanter S. I., Steele G. A., van der Zant H. S. J., Castellanos-Gomez A., Nano Lett., 2014, 14, 3347
[27]	Chen X., Lu X., Deng B., Sinai O., Shao Y., Li C., Yuan S., Tran V., Watanabe K., Taniguchi T., Naveh D., Yang L., Xia F., Nat. Commun., 2017, 8, 1672
[28]	Youngblood N., Chen C., Koester S. J., Li M., Nature Photon., 2015, 9, 247
[29]	He T., Li C., Zhang X., Ma Y., Cao X., Shi. X., Sun C., Li J., Song L., Zeng C., Zhang K., Zhang X., Zhang B., Phys. Status Solidi A, 2020, 217, 1900861
[30]	Kim J., Mastro M. A., Tadjer M. J., Kim J., ACS Appl. Mater. Interfaces, 2018, 10, 29724
[31]	Yang J., Yu W., Pan Z., Yu Q., Yin Q., Guo L., Zhao Y., Sun T., Bao Q., Zhang K., Small,2018, 14, 1802598

Electrically Stimulated Band Alignment Transit in Black Phosphorus/ β-Ga₂O₃ Heterostructure Dual-band Photodetector

Knowledge

Abstract

Cite this article

share this article

References 31

Related Articles 1

Recommended Articles

Metrics

Comments