Chemical Research in Chinese Universities ›› 2019, Vol. 35 ›› Issue (5): 879-883.doi: 10.1007/s40242-019-9060-2

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Simultaneous Photoreduction and Nitrogen Doping of Graphene Oxide for Supercapacitors by Direct Laser Writing

FU Xiuyan, XU Shuai, LUO Yang, LI Aiwu, YANG Han   

  1. State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, P. R. China
  • Received:2019-03-04 Online:2019-10-01 Published:2019-09-24
  • Contact: LI Aiwu, YANG Han E-mail:yanghan@jlu.edu.cn;liaw@jlu.edu.cn
  • Supported by:
    Supported by the National Basic Research Program of China(No.2017YFB1104300) and the National Natural Science Foundation of China(Nos.61775078, 21603083, 61522503).

Abstract: Graphene-based supercapacitors have attracted tremendous attention owing to their outstanding electrochemical performance. In terms of material, nitrogen(N)-doped graphene(NDG) displays enhanced specific capaci-tance and rate performance compared with bare graphene used as a supercapacitor electrode. However, it still remains a challenge to develop a facile and simple method of NDG in cost-effective manner. Here, we used a simple direct laser writing technique to accomplish the simultaneous photoreduction and N-doping of graphene oxide(GO) using urea as a N source. The N content of the resultant reduced N-doped graphene oxide(NGO) reached a maximum value of 6.37%. All reduced NGO(NRGO)-based supercapacitors exhibited a higher specific capacitance than those based on pure reduced GO(RGO). Interestingly, the electrochemical performance of NRGO-based supercapacitors varied with different contents of N species. Therefore, we can control the properties of the obtained NRGOs by adjusting the doping ratios, an important step in developing effective graphene-based energy storage devices.

Key words: Simultaneous photoreduction and nitrogen-doping, Graphene based supercapacitor, Direct laser writing