Chemical Research in Chinese Universities ›› 2025, Vol. 41 ›› Issue (1): 40-47.doi: 10.1007/s40242-024-4028-2

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Large-scale Preparation of Black CeOx with Stable Oxygen Vacancies

PENG Huan1, JIANG Mengmeng1, YE Jinfeng1, WANG Lei1, DING Shunmin2, CHEN Chao2   

  1. 1. College of Materials and Chemical Engineering, Pingxiang University, Pingxiang 337055, P. R. China;
    2. Key Laboratory of Jiangxi Province for Environment and Energy Catalysis, College of Chemistry and Chemical Engineering, Nanchang University, Nanchang 330031, P. R. China
  • Received:2024-01-31 Online:2025-02-01 Published:2025-01-18
  • Contact: WANG Lei,leiwang@pxu.edu.cn E-mail:leiwang@pxu.edu.cn
  • Supported by:
    This work was supported by the Science and Technology Research Program of the Education Department of Jiangxi Province, China (No. GJJ2202130) and the National Natural Science Foundation of China (No. 22262022).

Abstract: Oxygen vacancy in ceria is a crucial regulation factor for modifying materials. The reduced oxygen vacancy will undergo rapid recombination and deactivation due to the imbalance perturbation of active oxygen species, thereby restricting their larger-scale application. In this work, we proposed a strategy to stabilize oxygen vacancy in four black CeOx(Si) (0<x<2) by quartz sand doping reduction. The formation of a Ce-Ov-Si (Ov denoted as oxygen vacancy) interface, instrumental in constructing stable oxygen vacancies, is facilitated by rich hydroxyl groups. Characterizations of CeOx(Si) reveal that the heterogeneous hydrogen at the Ce-O-Si interface encourages the lattice distortion in ceria to obtain stable oxygen vacancies. Guided by the reusable feature, quartz sand doping reduction is a facile and feasible strategy to stabilize the oxygen vacancy of black CeOx for advanced materials on a large scale.

Key words: Black CeOx, Oxygen vacancy, Ce-Ov-Si, Stabilization, Quartz sand