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高等学校化学研究 ›› 2005, Vol. 21 ›› Issue (1): 78-82.

• Articles • 上一篇    下一篇

Effects of AlN Layer and Impurities on Optical Properties of GaN

YANG Jing-hai1,2, GONG Jie1, YANG Li-li1, FAN Hou-gang1, ZHANG Yong-jun1, O. Zseb3, CHEN Gang2   

  1. 1. The Institute of Condensed State Physics, Jilin Normal University, Siping 136000, P. R. China;
    2. College of Materials Science and Engineering, Jilin University, Changchun 130023, P. R. China;
    3. Department of Physics,Chalmers University of Technology, Goteborg SE-41296, Sweden
  • 收稿日期:2004-03-02 出版日期:2005-01-24 发布日期:2011-07-27
  • 基金资助:

    Supported by the Science and Technology Bureau of Jilin Province(No.20020615) and the Overseas-back Scholar Program of Ministry of Personnel of China.

Effects of AlN Layer and Impurities on Optical Properties of GaN

YANG Jing-hai1,2, GONG Jie1, YANG Li-li1, FAN Hou-gang1, ZHANG Yong-jun1, O. Zseb3, CHEN Gang2   

  1. 1. The Institute of Condensed State Physics, Jilin Normal University, Siping 136000, P. R. China;
    2. College of Materials Science and Engineering, Jilin University, Changchun 130023, P. R. China;
    3. Department of Physics,Chalmers University of Technology, Goteborg SE-41296, Sweden
  • Received:2004-03-02 Online:2005-01-24 Published:2011-07-27

PDF (PC)

摘要： The effects of the incorporated oxygen and the different buffer layers on the optical properties and surface morphology of GaN were studied.The results show that the decrease of the concentration of the incorporated oxygen has no effect on the surface morphology, but improves the optical properties.While the introduction of the AlN buffer layer makes not only the surface morphology but also the optical properties improve.Both the oxygen contamination from the nitrogen source and the resulted morphology are directly related to the line width of the low-temperature photoluminescence(PL) spectra.

关键词: GaN, Molecular beam epitaxy, Photoluminescence, Morphology

Abstract: The effects of the incorporated oxygen and the different buffer layers on the optical properties and surface morphology of GaN were studied.The results show that the decrease of the concentration of the incorporated oxygen has no effect on the surface morphology, but improves the optical properties.While the introduction of the AlN buffer layer makes not only the surface morphology but also the optical properties improve.Both the oxygen contamination from the nitrogen source and the resulted morphology are directly related to the line width of the low-temperature photoluminescence(PL) spectra.

Key words: GaN, Molecular beam epitaxy, Photoluminescence, Morphology