高等学校化学研究 ›› 2002, Vol. 18 ›› Issue (3): 270-273.
Anomalous Emission And Carrier Effect of Fresh Porous Silicon
ZOU Bing-suo1, WU Zhen-yu1, CAO Li1, DAI Jian-hua1, XIE Si-shen1, WANG Jian-ping2, Mostafa A. El-Sayed2
- 1. Optical Lab, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, P. R. China;
2. Laser Dynamics Laboratory, School of Chemistry and Biochemistry, Georgia Institute of Technology, Atlanta, GA30332-0400
Anomalous Emission And Carrier Effect of Fresh Porous Silicon
ZOU Bing-suo1, WU Zhen-yu1, CAO Li1, DAI Jian-hua1, XIE Si-shen1, WANG Jian-ping2, Mostafa A. El-Sayed2
- 1. Optical Lab, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, P. R. China;
2. Laser Dynamics Laboratory, School of Chemistry and Biochemistry, Georgia Institute of Technology, Atlanta, GA30332-0400
摘要： The emission and Fourier transformation infrared spectra of freshly prepared porous silicon(PS) and the silicon wafer were examined. Increasing temperature generally led to a decrease in the emission intensities of the PS samples, however, the freshly prepared sample showed an unusually large and sudden increase in its emission intensity at the specific temperature at which the hydrogen ion conductivity in the silicon wafer increased. The O-H vibrations of the silicon wafer also showed a sudden decrease at the same temperature. These results are consistent with the assumption that the luminescence of fresh PS comes from the carrier-bound exciton in its confined nanostructure.