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高等学校化学研究 ›› 2005, Vol. 21 ›› Issue (2): 137-140.

• Articles • 上一篇    下一篇

High Resistive ZnO/Diamond/Si Films Grown via Metal-organic Chemical Vapour Deposition

YANG Hong-jun1, ZHAO Bai-jun1, FANG Xiu-jun1, DU Guo-tong1, LIU Da-li1, GAO Chun-xiao2, LIU Xi-zhe2   

  1. 1. State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineerings;
    2. State Key Lab on Superhard Materials, Jilin University, Changchun 130023, P. R. China
  • 收稿日期:2004-03-04 出版日期:2005-03-24 发布日期:2011-07-27
  • 基金资助:

    Supported by the National Natural Sciences Foundation of China (No.60177007) and "863" project of China (No.2001AA311130).

High Resistive ZnO/Diamond/Si Films Grown via Metal-organic Chemical Vapour Deposition

YANG Hong-jun1, ZHAO Bai-jun1, FANG Xiu-jun1, DU Guo-tong1, LIU Da-li1, GAO Chun-xiao2, LIU Xi-zhe2   

  1. 1. State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineerings;
    2. State Key Lab on Superhard Materials, Jilin University, Changchun 130023, P. R. China
  • Received:2004-03-04 Online:2005-03-24 Published:2011-07-27

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摘要： Piezoelectric ZnO layers with high resistivity for surface acoustic wave applications were prepared on polycrystalline diamond/Si substrates with (111) orientation via metal-organic chemical vapour deposition.The characteristics of the films were optimized through different growth methods.The comparative study of the X-ray diffraction spectra and scanning electron microscopic images showed that the final-prepared ZnO films were dominantly c-axis oriented.Zn and O elements in the final prepared ZnO films were investigated through X-ray photoelectron spectroscopy.According to the statistical results, the n(Zn)/n(O) ratio is near 1.The Raman scattering was also performed in back scattering configuration.E2 mode was observed for the final films, which indicated that the better quality ZnO films had been obtained.The resistivity of the films was also enhanced via the modification of the growth methods.

关键词: MOCVD, XRD, SEM, Hall effect

Abstract: Piezoelectric ZnO layers with high resistivity for surface acoustic wave applications were prepared on polycrystalline diamond/Si substrates with (111) orientation via metal-organic chemical vapour deposition.The characteristics of the films were optimized through different growth methods.The comparative study of the X-ray diffraction spectra and scanning electron microscopic images showed that the final-prepared ZnO films were dominantly c-axis oriented.Zn and O elements in the final prepared ZnO films were investigated through X-ray photoelectron spectroscopy.According to the statistical results, the n(Zn)/n(O) ratio is near 1.The Raman scattering was also performed in back scattering configuration.E2 mode was observed for the final films, which indicated that the better quality ZnO films had been obtained.The resistivity of the films was also enhanced via the modification of the growth methods.

Key words: MOCVD, XRD, SEM, Hall effect