X-ray Multiple Diffraction Topographic Imaging Technique For Growth History Study of Habit Modifying Impurity Doped Crystals

高等学校化学研究 ›› 2004, Vol. 20 ›› Issue (4): 411-416.

X-ray Multiple Diffraction Topographic Imaging Technique For Growth History Study of Habit Modifying Impurity Doped Crystals

LAI X.¹, MA C.¹, K. J. Robert¹, M. C. Miller²

1. Institute of Particle Science and Engineering, Department of Chemical Engineering, University of Leeds, Leeds LS2 9JT, UK;
2. CCLRC Daresbury Laboratory, Daresbury, Warrington, Cheshire WA4 4AD, UK

收稿日期:2004-06-03 出版日期:2004-08-24 发布日期:2011-08-06
基金资助:
Supported by EPSRC, the UK Research Council(No.GRIR 65787).

X-ray Multiple Diffraction Topographic Imaging Technique For Growth History Study of Habit Modifying Impurity Doped Crystals

LAI X.¹, MA C.¹, K. J. Robert¹, M. C. Miller²

1. Institute of Particle Science and Engineering, Department of Chemical Engineering, University of Leeds, Leeds LS2 9JT, UK;
2. CCLRC Daresbury Laboratory, Daresbury, Warrington, Cheshire WA4 4AD, UK

Received:2004-06-03 Online:2004-08-24 Published:2011-08-06
Supported by:
Supported by EPSRC, the UK Research Council(No.GRIR 65787).

摘要/Abstract

摘要： A novel crystal characterization instrument has been built up in which a combination of X-ray multiple diffraction and X-ray topography is applied to enabling the cross-correlation between micro-crystallographic symmetry and its spatial dependence in relation to lattice defects.This facility is used to examine, in a selfconsistent manner, growth sector-dependant changes to both the crystallographic structure and the lattice defects associated with the action of habit-modifying additives in a number of representative crystal growth systems.In addition, the new instrument can be used to probe micro-crystallographic aspects (such as distortion to crystal symmetry) and relate these in a spatially resolved manner to the crystal defect structure in crystals doped with known habit modifiers.

关键词: X-ray diffraction, X-ray multiple diffraction, X-ray topography, Habit modification, Crystalgrowth, Growth defects

Abstract: A novel crystal characterization instrument has been built up in which a combination of X-ray multiple diffraction and X-ray topography is applied to enabling the cross-correlation between micro-crystallographic symmetry and its spatial dependence in relation to lattice defects.This facility is used to examine, in a selfconsistent manner, growth sector-dependant changes to both the crystallographic structure and the lattice defects associated with the action of habit-modifying additives in a number of representative crystal growth systems.In addition, the new instrument can be used to probe micro-crystallographic aspects (such as distortion to crystal symmetry) and relate these in a spatially resolved manner to the crystal defect structure in crystals doped with known habit modifiers.

Key words: X-ray diffraction, X-ray multiple diffraction, X-ray topography, Habit modification, Crystalgrowth, Growth defects

LAI X., MA C., K. J. Robert, M. C. Miller. X-ray Multiple Diffraction Topographic Imaging Technique For Growth History Study of Habit Modifying Impurity Doped Crystals[J]. 高等学校化学研究, 2004, 20(4): 411-416.

LAI X., MA C., K. J. Robert, M. C. Miller. X-ray Multiple Diffraction Topographic Imaging Technique For Growth History Study of Habit Modifying Impurity Doped Crystals[J]. Chemical Research in Chinese Universities, 2004, 20(4): 411-416.

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X-ray Multiple Diffraction Topographic Imaging Technique For Growth History Study of Habit Modifying Impurity Doped Crystals

X-ray Multiple Diffraction Topographic Imaging Technique For Growth History Study of Habit Modifying Impurity Doped Crystals

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