高等学校化学研究 ›› 2004, Vol. 20 ›› Issue (4): 407-410.
Surface Characterisation of Silicon Based MEMS
LI J.1, CUI Z.2, M. A. Baker1
- 1. The Surface Analysis Laboratory, School of Engineering, University of Surrey, Guildford, GU2 7XH, UK;
2. Rutherford Appleton Laboratory, Chilton, Didcot, UK
Surface Characterisation of Silicon Based MEMS
LI J.1, CUI Z.2, M. A. Baker1
- 1. The Surface Analysis Laboratory, School of Engineering, University of Surrey, Guildford, GU2 7XH, UK;
2. Rutherford Appleton Laboratory, Chilton, Didcot, UK
摘要： Polysilicon Microelectromechanical systems (MEMS) are the subject of intensive researches.Surface chemistry and topography of a MEMS test structure fabricated at Sandia National Laboratory, USA, were studied by means of scanning electron microscopy(SEM), X-ray photoelectron spectroscopy(XPS) and atomic force microscopy (AFM).XPS C1s and Si2p, spectra from the polysilieon components, silicon nitride substrate and a reference silicon wafer were compared.The results confirm the presence of a self-assembled monolayer (SAM) on the MEMS surface.An island-like morphology was found on both polysilicon and silicon nitride surfaces of the MEMS.The islands take the form of caps, being up to 0.5 μm in diameter and 20 nm in height.It is concluded that the co-existence of columnar growth and equiaxed growth during the low pressure chemical vapor deposition(LPCVD) of these layers leads to the observed morphology and the islands are caps to the columnar structures.