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高等学校化学研究 ›› 2001, Vol. 17 ›› Issue (S1): 12-12.

• Articles • 上一篇    下一篇

Oxide-assisted Synthesis and Properties of Semiconductor Nanowires

Lee S. T.   

  1. Center of Super-Diamond and Advanced Films(COSDAF) & Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR, China
  • 出版日期:2001-12-31 发布日期:2016-03-14
  • 通讯作者: Lee S. T.,E-mail:apannale@cityu.edu.hk,Fax:852-2784-4696,Tel:852-2788-9606 E-mail:apannale@cityu.edu.hk

Oxide-assisted Synthesis and Properties of Semiconductor Nanowires

Lee S. T.   

  1. Center of Super-Diamond and Advanced Films(COSDAF) & Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR, China
  • Online:2001-12-31 Published:2016-03-14
  • Contact: Lee S. T.,E-mail:apannale@cityu.edu.hk,Fax:852-2784-4696,Tel:852-2788-9606 E-mail:apannale@cityu.edu.hk

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摘要：

We introduce a new synthetic approach,called oxide-assisted growth method,which can produce bulk-quantity synthesis of high-purity(no metal contamination) one-dimensional semiconductor nanomaterials.

Abstract:

We introduce a new synthetic approach,called oxide-assisted growth method,which can produce bulk-quantity synthesis of high-purity(no metal contamination) one-dimensional semiconductor nanomaterials.