Studies on Growth of N-Polar InN Films by Pulsed Metal-organic Vapor Phase Epitaxy

doi:10.1007/s40242-016-5506-y

高等学校化学研究 ›› 2016, Vol. 32 ›› Issue (4): 669-673.doi: 10.1007/s40242-016-5506-y

Studies on Growth of N-Polar InN Films by Pulsed Metal-organic Vapor Phase Epitaxy

ZHAO Baijun^1,2, HAN Xu¹, YANG Fan¹, DONG Xin¹, ZHANG Yuantao¹

1. State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, P. R. China;
2. Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022, P. R. China

收稿日期:2015-12-25 修回日期:2016-06-03 出版日期:2016-08-01 发布日期:2016-06-27
通讯作者: DONG Xin,ZHANG Yuantao E-mail:dongx@jlu.edu.cn;zhangyt@jlu.edu.cn
基金资助:
Supported by the the National Basic Research Program of China(No.2011CB302005), the National Natural Science Foundation of China(Nos.61106003, 61274023, 61376046, 61223005), the Science and Technology Developing Project of Jilin Province, China(Nos.20130204032GX, 20150519004JH) and the Program for New Century Excellent Talents in Universities of China(No.NCET-13-0254).

Studies on Growth of N-Polar InN Films by Pulsed Metal-organic Vapor Phase Epitaxy

ZHAO Baijun^1,2, HAN Xu¹, YANG Fan¹, DONG Xin¹, ZHANG Yuantao¹

1. State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, P. R. China;
2. Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022, P. R. China

Received:2015-12-25 Revised:2016-06-03 Online:2016-08-01 Published:2016-06-27
Contact: DONG Xin,ZHANG Yuantao E-mail:dongx@jlu.edu.cn;zhangyt@jlu.edu.cn
Supported by:
Supported by the the National Basic Research Program of China(No.2011CB302005), the National Natural Science Foundation of China(Nos.61106003, 61274023, 61376046, 61223005), the Science and Technology Developing Project of Jilin Province, China(Nos.20130204032GX, 20150519004JH) and the Program for New Century Excellent Talents in Universities of China(No.NCET-13-0254).

摘要/Abstract

摘要：

We reported the growth of N-polar InN films on N-polar GaN/sapphire substrates by pulsed metal-organic vapor phase epitaxy. The crystalline quality, surface morphology, optical and electrical properties of N-polar InN films were investigated in details by varying the breaking time and trimethylindium(TMIn) duration of pulse cycle. It has been found that when the breaking time and the TMIn duration in each cycle remain at 30 and 60 s, respectively, the N-polar InN film obtained exhibits a better crystalline quality and greater optical properties. Meanwhile, the surface morphology and electrical properties of the N-polar InN films also greatly depend on the given growth conditions.

关键词: N-Polar, Pulsed metal-organic vapor phase epitaxy, InN

Abstract:

Key words: N-Polar, Pulsed metal-organic vapor phase epitaxy, InN

ZHAO Baijun, HAN Xu, YANG Fan, DONG Xin, ZHANG Yuantao. Studies on Growth of N-Polar InN Films by Pulsed Metal-organic Vapor Phase Epitaxy[J]. 高等学校化学研究, 2016, 32(4): 669-673.

ZHAO Baijun, HAN Xu, YANG Fan, DONG Xin, ZHANG Yuantao. Studies on Growth of N-Polar InN Films by Pulsed Metal-organic Vapor Phase Epitaxy[J]. Chemical Research in Chinese Universities, 2016, 32(4): 669-673.

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Studies on Growth of N-Polar InN Films by Pulsed Metal-organic Vapor Phase Epitaxy

Studies on Growth of N-Polar InN Films by Pulsed Metal-organic Vapor Phase Epitaxy

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