Metal-organic Chemical Vapor Deposition of GaSb/GaAs Quantum Dots：the Dependence of the Morphology on Growth Temperature and Vapour Ⅴ/Ⅲ Ratio

doi:10.1007/s40242-014-3342-5

高等学校化学研究 ›› 2014, Vol. 30 ›› Issue (1): 13-17.doi: 10.1007/s40242-014-3342-5

Metal-organic Chemical Vapor Deposition of GaSb/GaAs Quantum Dots：the Dependence of the Morphology on Growth Temperature and Vapour Ⅴ/Ⅲ Ratio

YANG Haoyu, LIU Renjun, LÜ You, WANG Liankai, LI Tiantian, LI Guoxing, ZHANG Yuantao, ZHANG Baolin

State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, P. R. China

收稿日期:2013-08-14 修回日期:2013-10-09 出版日期:2014-02-01 发布日期:2013-11-05
通讯作者: ZHANG Yuantao,E-mail:zhangyt@jlu.edu.cn; ZHANG Baolin,E-mail:zbl@jlu.edu.cn E-mail:zhangyt@jlu.edu.cn; zbl@jlu.edu.cn
基金资助:
Supported by the National Natural Science Foundation of China(No.61076010) and the Program of the State Key Laboratory on Integrated Optoelectronics, China(No. IOSKL2012ZZ13).

Metal-organic Chemical Vapor Deposition of GaSb/GaAs Quantum Dots：the Dependence of the Morphology on Growth Temperature and Vapour Ⅴ/Ⅲ Ratio

YANG Haoyu, LIU Renjun, LÜ You, WANG Liankai, LI Tiantian, LI Guoxing, ZHANG Yuantao, ZHANG Baolin

State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, P. R. China

Received:2013-08-14 Revised:2013-10-09 Online:2014-02-01 Published:2013-11-05
Contact: ZHANG Yuantao,E-mail:zhangyt@jlu.edu.cn; ZHANG Baolin,E-mail:zbl@jlu.edu.cn E-mail:zhangyt@jlu.edu.cn; zbl@jlu.edu.cn
Supported by:
Supported by the National Natural Science Foundation of China(No.61076010) and the Program of the State Key Laboratory on Integrated Optoelectronics, China(No. IOSKL2012ZZ13).

摘要/Abstract

摘要：

GaSb quantum dots have been widely applied in optoelectronic devices due to its unique electrical and optical properties. The effects of metal-organic chemical vapor deposition(MOCVD) parameters, such as growth temperature and vapour Ⅴ/Ⅲ ratio[Ⅴ/Ⅲ ratio means the molar ratio of trimethylgallium(TMGa) and triethylantimony(TESb)], were systematically investigated to achieve GaSb quantum dots with high quality and high density. The features of surface morphology of uncapped GaSb quantum dots were characterized by atomic force microscope(AFM) images. The results show that the surface morphologies of quantum dots are strongly dependent on growth temperature and vapour Ⅴ/Ⅲ ratio. GaSb quantum dots with an average height of 4.94 nm and a density of 2.45×10¹⁰ cm^-2 were obtained by optimizing growth temperature and Ⅴ/Ⅲ ratio.

关键词: GaSb quantum dot, Surface morphology, Metal-organic chemical vapor deposition, Atomic force microscope

Abstract:

Key words: GaSb quantum dot, Surface morphology, Metal-organic chemical vapor deposition, Atomic force microscope

YANG Haoyu, LIU Renjun, LÜ You, WANG Liankai, LI Tiantian, LI Guoxing, ZHANG Yuantao, ZHANG Baolin. Metal-organic Chemical Vapor Deposition of GaSb/GaAs Quantum Dots：the Dependence of the Morphology on Growth Temperature and Vapour Ⅴ/Ⅲ Ratio[J]. 高等学校化学研究, 2014, 30(1): 13-17.

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Metal-organic Chemical Vapor Deposition of GaSb/GaAs Quantum Dots：the Dependence of the Morphology on Growth Temperature and Vapour Ⅴ/Ⅲ Ratio

Metal-organic Chemical Vapor Deposition of GaSb/GaAs Quantum Dots：the Dependence of the Morphology on Growth Temperature and Vapour Ⅴ/Ⅲ Ratio

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