Electrically Stimulated Band Alignment Transit in Black Phosphorus/ β-Ga2O3 Heterostructure Dual-band Photodetector

doi:10.1007/s40242-020-0177-0

高等学校化学研究 ›› 2020, Vol. 36 ›› Issue (4): 703-708.doi: 10.1007/s40242-020-0177-0

Electrically Stimulated Band Alignment Transit in Black Phosphorus/ β-Ga₂O₃ Heterostructure Dual-band Photodetector

LI Chang^1,2, XIE Liu^2,3, HE Tao⁴, ZHANG Yan^2,3, DONG Zhuo^2,3, YANG Zeyuan^1,2, ZHANG Xiaodong⁴, WANG Zhongchang⁵, ZHANG Kai²

1. Nano Science and Technology Institute, University of Science and Technology of China, Suzhou 215123, P. R. China;
2. i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics(SINANO), Chinese Academy of Sciences, Suzhou 215123, P. R. China;
3. School of Nano Technology and Nano Bionics, University of Science and Technology of China, Hefei 230026, P. R. China;
4. CAS Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics(SINANO), Chinese Academy of Sciences, Suzhou 215123, P. R. China 5. International Iberian Nanotechnology Laboratory(INL), Avenida Mestre José Veiga s/n, Braga 4715-330, Portugal

收稿日期:2020-06-10 修回日期:2020-07-07 出版日期:2020-08-01 发布日期:2020-07-30
通讯作者: ZHANG Kai E-mail:kzhang2015@sinano.ac.cn
基金资助:
Supported by the National Natural Science Foundation of China(Nos.61922082, 61875223, 61927813), the Natural Science Foundation of Jiangsu Province, China(No.BK20191195) and the National Key R&D Program of China(No.2016YFE0105700).

Electrically Stimulated Band Alignment Transit in Black Phosphorus/ β-Ga₂O₃ Heterostructure Dual-band Photodetector

LI Chang^1,2, XIE Liu^2,3, HE Tao⁴, ZHANG Yan^2,3, DONG Zhuo^2,3, YANG Zeyuan^1,2, ZHANG Xiaodong⁴, WANG Zhongchang⁵, ZHANG Kai²

1. Nano Science and Technology Institute, University of Science and Technology of China, Suzhou 215123, P. R. China;
2. i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics(SINANO), Chinese Academy of Sciences, Suzhou 215123, P. R. China;
3. School of Nano Technology and Nano Bionics, University of Science and Technology of China, Hefei 230026, P. R. China;
4. CAS Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics(SINANO), Chinese Academy of Sciences, Suzhou 215123, P. R. China 5. International Iberian Nanotechnology Laboratory(INL), Avenida Mestre José Veiga s/n, Braga 4715-330, Portugal

Received:2020-06-10 Revised:2020-07-07 Online:2020-08-01 Published:2020-07-30
Contact: ZHANG Kai E-mail:kzhang2015@sinano.ac.cn
Supported by:
Supported by the National Natural Science Foundation of China(Nos.61922082, 61875223, 61927813), the Natural Science Foundation of Jiangsu Province, China(No.BK20191195) and the National Key R&D Program of China(No.2016YFE0105700).

摘要/Abstract

摘要： In recent decades, dual-band photodetectors have received widespread attention due to better target identification, which are considered as the development trend of next generation photodetectors. However, the traditional dual-band photodetectors based on heteroepitaxial growth, superlattice and multiple quantum well structures are limited by complex fabrication process and low integration. Herein, we report a UV/IR dual-band photodetector by integrating ultra-wide gap β-Ga₂O₃ and narrow-gap black phosphorous(BP) nanoflakes. A vertical van der Waals (vdW) heterostructure is formed between BP and β-Ga₂O₃ by mechanically exfoliated method integrated without the requirement of lattice match. The heterostructure devices show excellent rectification characteristics with high rectifying ratio of ca. 10⁶ and low reverse current around pA. Moreover, the device displays obvious photoresponse under UV and IR irradiations with responsivities of 0.87 and 2.15 mA/W, respectively. We also explore the band alignment transit within the heterostructure photodetector at different bias voltages. This work paves the way for fabricating novel dual-band photodetectors by utilizing 2D materials.

关键词: Black phosphorous, β-Gallium oxide, van der Waals heterostructure, Dual-band photodetector

Abstract: In recent decades, dual-band photodetectors have received widespread attention due to better target identification, which are considered as the development trend of next generation photodetectors. However, the traditional dual-band photodetectors based on heteroepitaxial growth, superlattice and multiple quantum well structures are limited by complex fabrication process and low integration. Herein, we report a UV/IR dual-band photodetector by integrating ultra-wide gap β-Ga₂O₃ and narrow-gap black phosphorous(BP) nanoflakes. A vertical van der Waals (vdW) heterostructure is formed between BP and β-Ga₂O₃ by mechanically exfoliated method integrated without the requirement of lattice match. The heterostructure devices show excellent rectification characteristics with high rectifying ratio of ca. 10⁶ and low reverse current around pA. Moreover, the device displays obvious photoresponse under UV and IR irradiations with responsivities of 0.87 and 2.15 mA/W, respectively. We also explore the band alignment transit within the heterostructure photodetector at different bias voltages. This work paves the way for fabricating novel dual-band photodetectors by utilizing 2D materials.

Key words: Black phosphorous, β-Gallium oxide, van der Waals heterostructure, Dual-band photodetector

LI Chang, XIE Liu, HE Tao, ZHANG Yan, DONG Zhuo, YANG Zeyuan, ZHANG Xiaodong, WANG Zhongchang, ZHANG Kai. Electrically Stimulated Band Alignment Transit in Black Phosphorus/ β-Ga₂O₃ Heterostructure Dual-band Photodetector[J]. 高等学校化学研究, 2020, 36(4): 703-708.

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Electrically Stimulated Band Alignment Transit in Black Phosphorus/ β-Ga₂O₃ Heterostructure Dual-band Photodetector

Electrically Stimulated Band Alignment Transit in Black Phosphorus/ β-Ga₂O₃ Heterostructure Dual-band Photodetector

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