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高等学校化学研究 ›› 2006, Vol. 22 ›› Issue (4): 543-546.

• Articles • 上一篇    

A New Method of Photopatterning with LB Films Based on a Chemically Amplified Mechanism

LI Tie-sheng1, Masaya Mitsuishi2, Tokuji Miyashta2   

  1. 1. Department of Chemistry, Zhengzhou University, Zhengzhou 450052, P. R. China;
    2. Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Sendai 980-8577, Japan
  • 收稿日期:2005-08-31 出版日期:2006-08-24 发布日期:2011-08-06
  • 基金资助:

    Supported by a Grant-in-Aid for Scientific Research from the Japanese Ministry of Education, Sports, and Culture(No. 14205130), and Natural Science Foundation of Henan Province(No. 0611020100).

A New Method of Photopatterning with LB Films Based on a Chemically Amplified Mechanism

LI Tie-sheng1, Masaya Mitsuishi2, Tokuji Miyashta2   

  1. 1. Department of Chemistry, Zhengzhou University, Zhengzhou 450052, P. R. China;
    2. Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Sendai 980-8577, Japan
  • Received:2005-08-31 Online:2006-08-24 Published:2011-08-06
  • Supported by:

    Supported by a Grant-in-Aid for Scientific Research from the Japanese Ministry of Education, Sports, and Culture(No. 14205130), and Natural Science Foundation of Henan Province(No. 0611020100).

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摘要： A new approach to introducing a photoacid generator(PAG) into Langmuir-Blodgett(LB) films to draw photopatterns as a lithographic process is described here. The chemically amplified positive-tone resist system used here consists of two components: a copolymer, poly(dodecrylacrylamide-co-4-t-butyloxylvinyl-phenylcarbonate)[P(DDA-t-BVPC53)] and a PAG, tri(2,3-dibromopropyl) isocyanurate(TDBPIC). In the two-component system, the acid generated by the PAG catalyzes the deprotection reaction of P(DDA-t-BVPC53), to remove the tert-butoxycarbonyl group(t-BOC) in the exposed region during the postexposure baking process, thus rendering the exposed region soluble to alkaline aqueous solvents to form a positive tone. Photolithographic properties of the LB films have been evaluated. The patterns can be resolved with a resolution of 1 μm line width by UV irradiation, followed by development with an alkaline solution. The LB films can be used to generate etched gold relief images on a glass substrate via an aqueous iodide, like ammonium iodide, in alcohol/water as the etchant. The etch resistance of such LB films is sufficiently good, allowing patterning of a gold film suitable for photomask fabrication.

关键词: LB film, Copolymer, Photopatterning, Chemically amplified resist

Abstract: A new approach to introducing a photoacid generator(PAG) into Langmuir-Blodgett(LB) films to draw photopatterns as a lithographic process is described here. The chemically amplified positive-tone resist system used here consists of two components: a copolymer, poly(dodecrylacrylamide-co-4-t-butyloxylvinyl-phenylcarbonate)[P(DDA-t-BVPC53)] and a PAG, tri(2,3-dibromopropyl) isocyanurate(TDBPIC). In the two-component system, the acid generated by the PAG catalyzes the deprotection reaction of P(DDA-t-BVPC53), to remove the tert-butoxycarbonyl group(t-BOC) in the exposed region during the postexposure baking process, thus rendering the exposed region soluble to alkaline aqueous solvents to form a positive tone. Photolithographic properties of the LB films have been evaluated. The patterns can be resolved with a resolution of 1 μm line width by UV irradiation, followed by development with an alkaline solution. The LB films can be used to generate etched gold relief images on a glass substrate via an aqueous iodide, like ammonium iodide, in alcohol/water as the etchant. The etch resistance of such LB films is sufficiently good, allowing patterning of a gold film suitable for photomask fabrication.

Key words: LB film, Copolymer, Photopatterning, Chemically amplified resist