[an error occurred while processing this directive]

高等学校化学研究 ›› 2004, Vol. 20 ›› Issue (4): 396-402.

• Articles • 上一篇    下一篇

Formation of High-quality Advanced High-k Oxide Layers at Low Temperature by Excimer UV Lamp-assisted Photo-CVD and Sol-gel Processing

YU J. J.   

  1. Electronic & Electrical Engineering, University College London, Torrington Place London WC1E 7JE, U. K.
  • 收稿日期:2004-06-03 出版日期:2004-08-24 发布日期:2011-08-06

Formation of High-quality Advanced High-k Oxide Layers at Low Temperature by Excimer UV Lamp-assisted Photo-CVD and Sol-gel Processing

YU J. J.   

  1. Electronic & Electrical Engineering, University College London, Torrington Place London WC1E 7JE, U. K.
  • Received:2004-06-03 Online:2004-08-24 Published:2011-08-06

PDF (PC)

被引次数

1

摘要： We have successfully demonstrated that high quality and high dielectric constant layers can be fabricated by low temperature photo-induced or -assisted processing.Ta2O5 and ZrO2 have been deposited at t＜400 ℃by means of a UV photo-CVD technique and HfO2 by photo-assisted sol-gel processing with the aid of excimer lamps.The UV annealing of as-grown layers was found to significantly improve their electrical properties.Low leakage current densities on the order of 10-8 A/cm2 at 1 MV/cm for deposited ultrathin Ta2O5 films and ca.10-6 A/cm2 for the photo-CVD ZrO2 layers and photo-irradiated sol-gel HfO2 layers have been readily achieved.The improvement in the leakage properties of these layers is attributed to the UV-generated active oxygen species O(1D) which strongly oxidize any suboxides to form more stoichiometric oxides on removing certain defects, oxygen vacancies and impurities present in the as-prepared layers.The photo-CVD Ta2O5films deposited across 10.16-cm Si wafers exhibit a high thickness uniformity with a variation of less than ±2.0% being obtained for ultrathin ca.10 nm thick films.The lamp technology can in principle be extended to larger area wafers, providing a promising low temperature route to the fabrication of a range of high quality thin films for future ULSI technology.

关键词: Excimer lamp, High-k dielectrics, Thin film, Chemical vapour deposition (CVD), Sol-gel pro-cessing

Abstract: We have successfully demonstrated that high quality and high dielectric constant layers can be fabricated by low temperature photo-induced or -assisted processing.Ta2O5 and ZrO2 have been deposited at t＜400 ℃by means of a UV photo-CVD technique and HfO2 by photo-assisted sol-gel processing with the aid of excimer lamps.The UV annealing of as-grown layers was found to significantly improve their electrical properties.Low leakage current densities on the order of 10-8 A/cm2 at 1 MV/cm for deposited ultrathin Ta2O5 films and ca.10-6 A/cm2 for the photo-CVD ZrO2 layers and photo-irradiated sol-gel HfO2 layers have been readily achieved.The improvement in the leakage properties of these layers is attributed to the UV-generated active oxygen species O(1D) which strongly oxidize any suboxides to form more stoichiometric oxides on removing certain defects, oxygen vacancies and impurities present in the as-prepared layers.The photo-CVD Ta2O5films deposited across 10.16-cm Si wafers exhibit a high thickness uniformity with a variation of less than ±2.0% being obtained for ultrathin ca.10 nm thick films.The lamp technology can in principle be extended to larger area wafers, providing a promising low temperature route to the fabrication of a range of high quality thin films for future ULSI technology.

Key words: Excimer lamp, High-k dielectrics, Thin film, Chemical vapour deposition (CVD), Sol-gel pro-cessing