Growth of GeO2 Crystallite Thin Film on Si Substrate by Langmuir-Blodgett Technique

高等学校化学研究 ›› 2002, Vol. 18 ›› Issue (4): 478-480.

• Research Notes • 上一篇下一篇

Growth of GeO₂ Crystallite Thin Film on Si Substrate by Langmuir-Blodgett Technique

JIN Jian, GUO Yi, CHEN Xia, LI Ye-zhi, YANG Wen-sheng, LI Tie-jin

College of Chemistry, Jilin University, Changchun 130023, P. R. China

收稿日期:2001-11-02 出版日期:2002-12-24 发布日期:2011-08-04
基金资助:
Supported by the National Natural Science Foundation of China(No.50172019).

Growth of GeO₂ Crystallite Thin Film on Si Substrate by Langmuir-Blodgett Technique

JIN Jian, GUO Yi, CHEN Xia, LI Ye-zhi, YANG Wen-sheng, LI Tie-jin

College of Chemistry, Jilin University, Changchun 130023, P. R. China

Received:2001-11-02 Online:2002-12-24 Published:2011-08-04
Supported by:
Supported by the National Natural Science Foundation of China(No.50172019).

摘要/Abstract

关键词: GeO₂ crystallite film, Langmuir-Blodgett technique, Reversed micelle, Oligomer

Key words: GeO₂ crystallite film, Langmuir-Blodgett technique, Reversed micelle, Oligomer

JIN Jian, GUO Yi, CHEN Xia, LI Ye-zhi, YANG Wen-sheng, LI Tie-jin. Growth of GeO₂ Crystallite Thin Film on Si Substrate by Langmuir-Blodgett Technique[J]. 高等学校化学研究, 2002, 18(4): 478-480.

JIN Jian, GUO Yi, CHEN Xia, LI Ye-zhi, YANG Wen-sheng, LI Tie-jin. Growth of GeO₂ Crystallite Thin Film on Si Substrate by Langmuir-Blodgett Technique[J]. Chemical Research in Chinese Universities, 2002, 18(4): 478-480.

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Growth of GeO₂ Crystallite Thin Film on Si Substrate by Langmuir-Blodgett Technique

Growth of GeO₂ Crystallite Thin Film on Si Substrate by Langmuir-Blodgett Technique

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